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IRF3704ZCS Datasheet PDF

Inchange Semiconductor IRF3704ZCS

N-Channel MOSFET

Part No. IRF3704ZCS
Datasheet IRF3704ZCS Download
Manufacturer
Inchange Semiconductor
Description N-Channel MOSFET
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IRF3704ZCS datasheet page 1 preview

FEATURES

●With TO-263( D2PAK ) packaging
●High speed switching
●Low gate input resistance
●Standard level gate drive
●Easy to use
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IRF3704ZCS
●

APPLICATIONS

●Power supply
●Switching applications
●

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 20 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±16 67 47 260 PD Total Dissipation 57 Tj Operating Junction Temperature 150 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃
●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 2.65 40 UNIT ℃/W ℃/W isc website: 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3704ZCS

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDIT...
IRF3704ZCS page 2 preview