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IRF3708S - N-Channel MOSFET

General Description

Static drain-source on-resistance: RDS(on) ≤12mΩ@VGS= 10V Drain Source Voltage : VDSS= 30V(Min) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation

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High Frequency Synchronous Buck Converters for Comp

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isc N-Channel MOSFET Transistor IRF3708S ·DESCRIPTION ·Static drain-source on-resistance: RDS(on) ≤12mΩ@VGS= 10V ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·High Frequency Synchronous Buck Converters for Computer Processor Power. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 30 V VGS Gate-Source Voltage ±12 V ID Drain Current-continuous 62 A ID(puls) Pulse Drain Current 248 A Ptot Total Dissipation 87 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.