IRF3708S Overview
·Static drain-source on-resistance: RDS(on) ≤12mΩ@VGS= 10V ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS.
| Part number | IRF3708S |
|---|---|
| Datasheet | IRF3708S-INCHANGE.pdf |
| File Size | 265.75 KB |
| Manufacturer | Inchange Semiconductor |
| Description | N-Channel MOSFET |
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·Static drain-source on-resistance: RDS(on) ≤12mΩ@VGS= 10V ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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IRF3708S | Power MOSFET | International Rectifier |
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IRF3708SPbF | Power MOSFET | International Rectifier |
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IRF3708 | Power MOSFET | International Rectifier |
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IRF3708L | Power MOSFET | International Rectifier |
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IRF3708LPbF | Power MOSFET | International Rectifier |
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