IRF3708S Description
·Static drain-source on-resistance: RDS(on) ≤12mΩ@VGS= 10V ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS.
IRF3708S is N-Channel MOSFET manufactured by Inchange Semiconductor .
| Manufacturer | Part Number | Description |
|---|---|---|
International Rectifier |
IRF3708S | Power MOSFET |
International Rectifier |
IRF3708SPbF | Power MOSFET |
International Rectifier |
IRF3708 | Power MOSFET |
International Rectifier |
IRF3708L | Power MOSFET |
International Rectifier |
IRF3708LPbF | Power MOSFET |
·Static drain-source on-resistance: RDS(on) ≤12mΩ@VGS= 10V ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS.