Datasheet4U Logo Datasheet4U.com

IRF3711S - N-Channel MOSFET

General Description

Static drain-source on-resistance: RDS(on) ≤6mΩ@VGS= 10V Drain Source Voltage : VDSS= 20V(Min) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation

.

High Frequency Synchronous Buck Converters for Compu

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF3711S Power MOSFET International Rectifier
IRF3711SPBF Power MOSFET International Rectifier
IRF3711 Power MOSFET International Rectifier
IRF3711L Power MOSFET International Rectifier
IRF3711LPBF Power MOSFET International Rectifier

Other Datasheets by Inchange Semiconductor

Part Number Description
IRF3711 N-Channel MOSFET
IRF3710L N-Channel MOSFET
IRF3710S N-Channel MOSFET
IRF3710Z N-Channel MOSFET
IRF3710ZL N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor IRF3711S ·DESCRIPTION ·Static drain-source on-resistance: RDS(on) ≤6mΩ@VGS= 10V ·Drain Source Voltage : VDSS= 20V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·High Frequency Synchronous Buck Converters for Computer Processor Power. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 20 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous 110 A ID(puls) Pulse Drain Current 440 A Ptot Total Dissipation 120 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.