IRF3711S Overview
·Static drain-source on-resistance: RDS(on) ≤6mΩ@VGS= 10V ·Drain Source Voltage : VDSS= 20V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS.
IRF3711S datasheet by Inchange Semiconductor.
| Part number | IRF3711S |
|---|---|
| Datasheet | IRF3711S-INCHANGE.pdf |
| File Size | 264.79 KB |
| Manufacturer | Inchange Semiconductor |
| Description | N-Channel MOSFET |
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·Static drain-source on-resistance: RDS(on) ≤6mΩ@VGS= 10V ·Drain Source Voltage : VDSS= 20V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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IRF3711S | Power MOSFET | International Rectifier |
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IRF3711SPBF | Power MOSFET | International Rectifier |
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IRF3711 | Power MOSFET | International Rectifier |
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IRF3711L | Power MOSFET | International Rectifier |
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IRF3711LPBF | Power MOSFET | International Rectifier |
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