Inchange Semiconductor IRF440
N-Channel MOSFET Transistor
IRF440 Specifications
- Mount Type : Through Hole
- Breakdown Voltage : 500V
- Threshold Voltage : 4V
- Drain-Source Resistance : 980mΩ
- Terminals : 2
- Max Power Dissipation : 125W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | IRF440 |
|---|---|
| Datasheet | IRF440 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
DESCRIPTION
●VGS Rated at ±20V●Silicon Gate for Fast Switching Speeds
●IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature
●Rugged
APPLICATIONS
●Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 500 ±20 V V Drain Current-continuous@ TC=25℃ 8 A Total Dissipation@TC=25℃ 125 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-A Thermal Resistance,Junction to Ambient 30 ℃/W isc website： 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF440●
ELECTRICAL CHARACTERISTICS
(TC=25℃) SYMBOL PARAMETER CONDITIONS V(B...