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IRF470 Datasheet PDF

Inchange Semiconductor IRF470

N-Channel MOSFET Transistor

Part No. IRF470
Datasheet IRF470 Download
Manufacturer
Inchange Semiconductor
Description N-Channel MOSFET Transistor
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IRF470 datasheet page 1 preview

DESCRIPTION

●Repetitive Avalanche Ratings
●Dynamic dv/dt Rating
●Hermetically Sealed
●Simple Drive Requirements
●Ease of Paralleling

APPLICATIONS

●Designed for applications such as switching power Supplies ,motor controls ,inverters ,choppers ,audio amplifiers and high energy pulse circuits.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 500 ±20 V V Drain Current-continuous@ TC=25℃ 24 A Total Dissipation@TC=25℃ 300 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-A Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 0.42 30 ℃/W ℃/W isc website: 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF470
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ELECTRICAL CHARACTERISTICS

(TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakd...
IRF470 page 2 preview