IRF4905L Overview
Key Features
- Static drain-source on-resistance: RDS(on)≤20mΩ(@VGS= -10V; ID= -38A)
- Advanced trench process technology
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | IRF4905L |
|---|---|
| Description | P-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 224.80 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF4905L | International Rectifier | Power MOSFET |
| IRF4905LPBF | International Rectifier | HEXFET Power MOSFET |
| IRF4905 | International Rectifier | Power MOSFET |
| IRF4905PbF | International Rectifier | Power MOSFET |
| F4905S | International Rectifier | IRF4905S |