Datasheet4U Logo Datasheet4U.com

IRF520NL - N-Channel MOSFET

Key Features

  • With To-262 package.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF520NLPBF HEXFET Power MOSFET International Rectifier
IRF520N Power MOSFET International Rectifier
IRF520NPbF Power MOSFET International Rectifier
IRF520NS Power MOSFET International Rectifier
IRF520NSPBF HEXFET Power MOSFET International Rectifier

Other Datasheets by Inchange Semiconductor

Part Number Description
IRF520N N-Channel MOSFET
IRF520NS N-Channel MOSFET
IRF520 N-Channel MOSFET
IRF5210 P-Channel MOSFET
IRF5210L P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 9.7 6.8 38 PD Total Dissipation @TC=25℃ 48 Tch Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 3.1 ℃/W IRF520NL isc website：www.iscsemi.