IRF5210 Overview
·bine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -40 IDM Drain Current-Single Pulsed -140 PD Total Dissipation @TC=25℃ 200 Tj Max. Operating Junction Temperature...
IRF5210 Key Features
- Static drain-source on-resistance
- DESCRIPTION -bine with the fast switching speed and ruggedized device
