Datasheet4U Logo Datasheet4U.com

IRF5210SPBF - P-Channel MOSFET

Key Features

  • P-channel.
  • With TO-263(D2PAK) packaging.
  • Uninterruptible power supply.
  • High speed switching.
  • Ultra low on-resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operationz.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF5210SPBF Power MOSFET International Rectifier
IRF5210S Power MOSFET International Rectifier
IRF5210 Power MOSFET International Rectifier
IRF5210L Power MOSFET International Rectifier
IRF5210LPBF Power MOSFET International Rectifier

Other Datasheets by Inchange Semiconductor

Part Number Description
IRF5210S P-Channel MOSFET
IRF5210 P-Channel MOSFET
IRF5210L P-Channel MOSFET
IRF520 N-Channel MOSFET
IRF520N N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc P-Channel MOSFET Transistor ·FEATURES ·P-channel ·With TO-263(D2PAK) packaging ·Uninterruptible power supply ·High speed switching ·Ultra low on-resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz INCHANGE Semiconductor IRF5210SPBF ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 -38 -24 -140 PD Total Dissipation 170 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-