Inchange Semiconductor IRF531
N-Channel MOSFET Transistor
IRF531 Specifications
- Drain-Source Resistance : 160mΩ
- Min Breakdown Voltage : 80V
- Terminals : 3
- Max Power Dissipation : 79W
- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | IRF531 |
|---|---|
| Datasheet | IRF531 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Low RDS(on)●VGS Rated at ±20V
●Silicon Gate for Fast Switching Speed
●Rugged
●Low Drive Requirements
●DESCRITION
●Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 80 ±20 V V ID Drain Current-Continuous 14 A IDM Drain Current-Single Plused 56 A PD Total Dissipation @TC=25℃ 79 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.9 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W isc website： 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF531
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAM...