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IRF611 Datasheet PDF

Inchange Semiconductor IRF611

N-Channel Mosfet Transistor

Part No. IRF611
Datasheet IRF611 Download
Manufacturer
Inchange Semiconductor
Description N-Channel Mosfet Transistor
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IRF611 datasheet page 1 preview

FEATURES

●Low RDS(on)
●VGS Rated at ±20V
●Silicon Gate for Fast Switching Speed
●Rugged
●Low Drive Requirements isc Product Specification IRF611
●DESCRITION
●Designed for high speed applications, such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse.
●

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 150 ±20 V V ID Drain Current-Continuous 3.3 A IDM Drain Current-Single Plused 8A PD Total Dissipation @TC=25℃ 43 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃
●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.9 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W isc website: 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF611

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified...
IRF611 page 2 preview