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IRF631 Datasheet PDF

Inchange Semiconductor IRF631

N-Channel Mosfet Transistor

Part No. IRF631
Datasheet IRF631 Download
Manufacturer
Inchange Semiconductor
Description N-Channel Mosfet Transistor
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IRF631 datasheet page 1 preview

FEATURES

●RDS(on) =0.4Ω
●9A and 150V
●single pulse avalanche energy rated
●SOA is Power- Dissipation Limited
●Linear Transfer Characteristics
●High Input Impedance isc Product Specification IRF631
●DESCRITION
●Designed for high speed applications, such as switching power supplies , AC and DC motor controls ,relay and solenoid drivers and other pulse.
●

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 150 ±20 V V ID Drain Current-Continuous 9A IDM Drain Current-Single Plused 36 A PD Total Dissipation @TC=25℃ 75 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃
●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 1.67 80 ℃/W ℃/W isc website: 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF631 ELECTRIC...
IRF631 page 2 preview