Inchange Semiconductor IRF640
N-Channel MOSFET Transistor
DESCRIPTION
●Drain Current –ID= 18A@ TC=25℃●Drain Source Voltage- : VDSS= 200V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max)
●Fast Switching Speed
●Low Drive Requirement
APPLICATIONS
●Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 18 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 1.0 62.5 ℃/W ℃/W isc Website: INCHANGE Semiconductor isc N-Channel Mos