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IRF640 Datasheet PDF

Inchange Semiconductor IRF640

N-Channel MOSFET Transistor

Part No. IRF640
Datasheet IRF640 Download
Manufacturer
Inchange Semiconductor
Description N-Channel MOSFET Transistor
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IRF640 datasheet page 1 preview

DESCRIPTION

●Drain Current –ID= 18A@ TC=25℃
●Drain Source Voltage- : VDSS= 200V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max)
●Fast Switching Speed
●Low Drive Requirement

APPLICATIONS

●Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 18 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 1.0 62.5 ℃/W ℃/W isc Website: INCHANGE Semiconductor isc N-Channel Mos
IRF640 page 2 preview