Inchange Semiconductor IRF640NL
N-Channel MOSFET
| Part No. | IRF640NL |
|---|---|
| Datasheet | IRF640NL Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●With TO-262 packaging●High speed switching
●Low gate input resistance
●Standard level gate drive
●Easy to use
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
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APPLICATIONS
●Power supply●Switching applications
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 18 PD Total Dissipation @TC=25℃ 150 Tj Max. Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A W ℃ ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 1 UNIT ℃/W IRF640NL isc website： 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 250uA VGS(th) Gate Threshold Voltage VDS=VGS; ID= 250uA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 11A IG...