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IRF9Z34N Datasheet

P-channel MOSFET

Manufacturer: Inchange Semiconductor

IRF9Z34N Overview

·bine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -19 IDM Drain Current-Single Pulsed -68 PD Total Dissipation @TC=25℃ 68 Tj Max. Operating Junction Temperature 175...

IRF9Z34N Key Features

  • Static drain-source on-resistance
  • DESCRIPTION -bine with the fast switching speed and ruggedized device

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