Datasheet4U Logo Datasheet4U.com

IRF9Z34NL - P-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on)≤100mΩ(@VGS= -10V; ID= -10A).
  • Advanced trench process technology.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – IRF9Z34NL

Datasheet Details

Part number IRF9Z34NL
Manufacturer INCHANGE
File Size 225.06 KB
Description P-Channel MOSFET
Datasheet download datasheet IRF9Z34NL Datasheet
Additional preview pages of the IRF9Z34NL datasheet.

📁 Similar Datasheet

  • IRF9Z34NL - Power MOSFET (International Rectifier)
  • IRF9Z34NLPBF - MOSFET (International Rectifier)
  • IRF9Z34N - Power MOSFET (International Rectifier)
  • IRF9Z34NPbF - Power MOSFET (International Rectifier)
  • IRF9Z34NS - Power MOSFET (International Rectifier)
  • IRF9Z34NSPBF - MOSFET (International Rectifier)
  • IRF9Z34 - Power MOSFET (International Rectifier)
  • IRF9Z34 - Power MOSFET (Vishay)
  • IRF9Z34L - Power MOSFET (International Rectifier)
  • IRF9Z34L - Power MOSFET (Vishay)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤100mΩ(@VGS= -10V; ID= -10A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous PD Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance IRF9Z34NL VALUE -55 ±20 -19 68 -55~175 -55~175 UNIT V V A W ℃ ℃ MAX 2.2 UNIT ℃/W isc website：www.iscsemi.
Published: |