Inchange Semiconductor IRFAC30
N-Channel MOSFET Transistor
FEATURES
●Lower Input Capacitance●Improved Gate Charge
●Extended Safe Operating Area
●Rugged Gate Oxide Technology
●High speed switching
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION
●High current ,high speed switching
●Switch mode power supplies
●DC-AC converters for welding equipment and Uninterruptible power supplies and motor Driver.
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 3.6 A IDM Drain Current-Single Plused 14 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35 ℃/W isc website: 1 isc & iscsemi is registered trademark isc N-Channel Mosfet TransistorELECTRICAL CHARACTERISTICS
TC=25℃ un...