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IRFB3607 - TO-262 N-Channel MOSFET

Datasheet Summary

Features

  • Static drain-source on-resistance: RDS(on) ≤9.0mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number IRFB3607
Manufacturer INCHANGE
File Size 257.33 KB
Description TO-262 N-Channel MOSFET
Datasheet download datasheet IRFB3607 Datasheet
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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3607 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤9.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 80 A IDM Drain Current-Single Pulsed 310 A PD Total Dissipation @TC=25℃ 140 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 1.
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