Full PDF Text Transcription for IRFB3607 (Reference)
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IRFB3607. For precise diagrams, and layout, please refer to the original PDF.
sistance: RDS(on) ≤9.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 80 A IDM Drain Current-Single Pulsed 310 A PD Total Dissipation @TC=25℃ 140 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal re