Datasheet4U Logo Datasheet4U.com

IRFB38N20D - N-Channel MOSFET

Features

  • br>.
  • Static drain-source on-resistance: RDS(on) ≤54mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – IRFB38N20D

Datasheet Details

Part number IRFB38N20D
Manufacturer INCHANGE
File Size 241.49 KB
Description N-Channel MOSFET
Datasheet download datasheet IRFB38N20D Datasheet
Additional preview pages of the IRFB38N20D datasheet.

📁 Similar Datasheet

Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor IRFB38N20D，IIRFB38N20D ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤54mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 43 IDM Drain Current-Single Pulsed 180 PD Total Dissipation @TC=25℃ 300 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.
Published: |