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IRFB4229 - N-Channel MOSFET

Key Features

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  • Static drain-source on-resistance: RDS(on) ≤46mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel MOSFET Transistor IRFB4229，IIRFB4229 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤46mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·175℃ operating junction temperature and high repetitive peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 250 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 46 IDM Drain Current-Single Pulsed 180 PD Total Dissipation @TC=25℃ 330 Tj Max.