IRFB7730 - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on) ≤2.6mΩ.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IRFB7730
Manufacturer	Inchange Semiconductor
File Size	241.90 KB
Description	N-Channel MOSFET
Datasheet	IRFB7730 Datasheet
Additional preview pages of the IRFB7730 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IRFB7730,IIRFB7730 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.6mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Synchronous Rectifier applications ·Resonant mode power supplies ·Battery powered circuits ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 195 IDM Drain Current-Single Pulsed 984 PD Total Dissipation @TC=25℃ 375 Tj Max.

Published: Oct 12, 2020 |