Inchange Semiconductor IRFP250A
N-Channel MOSFET Transistor
FEATURES
●Drain Current –ID= 32A@ TC=25℃●Drain Source Voltage- : VDSS= 200V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max)
●Fast Switching
DESCRIPTION
●Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±20 V V ID Drain Current-Continuous 32 A IDM Drain Current-Single Pluse 128 A PD Total Dissipation @TC=25℃ 204 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.7 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 30 ℃/W isc website: 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP250AELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-So...