Download IRFP3006 Datasheet PDF
Inchange Semiconductor
IRFP3006
IRFP3006 is N-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES - Static drain-source on-resistance: RDS(on) ≤2.5mΩ - Enhancement mode: - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRITION - High Efficiency Synchronous Rectification in SMPS - Uninterruptible Power Supply - High Speed Power Switching - Hard Switched And High Frequency Circuits - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage Gate-Source Voltage ±20 Drain Current-Continuous Drain Current-Single Pulsed Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.4...