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IRFP3207Z - N-Channel MOSFET

General Description

High Speed Power Switching Hard Switched and High Frequency Circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 170 A IDM Drain Current-Single Pluse 670

Key Features

  • Drain Current.
  • ID= 170A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 75V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 4.1mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel MOSFET Transistor IRFP3207Z FEATURES ·Drain Current –ID= 170A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.1mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·High Speed Power Switching ·Hard Switched and High Frequency Circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 170 A IDM Drain Current-Single Pluse 670 A PD Total Dissipation @TC=25℃ 300 W TJ Max.