IRFP32N50K - N-Channel MOSFET

Inchange Semiconductor

Key Features

With TO-247 packaging.
With low gate drive requirements.
Easy to drive.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IRFP32N50K n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	IRFP32N50K
Manufacturer	Inchange Semiconductor
File Size	256.46 KB
Description	N-Channel MOSFET
Datasheet	IRFP32N50K Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
IRFP32N50K	Power MOSFET	International Rectifier
IRFP32N50KPBF	HEXFET Power MOSFET	International Rectifier
IRFP32N50KS	Power MOSFET	International Rectifier
IRFP3205	N-CHANNEL MOSFET	BLUE ROCKET ELECTRONICS
IRFP3206PBF	HEXFET Power MOSFET	International Rectifier

Other Datasheets by Inchange Semiconductor

Part Number	Description
IRFP3206	N-Channel MOSFET
IRFP3207Z	N-Channel MOSFET
IRFP3006	N-Channel MOSFET
IRFP3077	N-Channel MOSFET
IRFP31N50L	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IRFP32N50K ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 32 20 130 PD Total Dissipation 460 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.26 UNIT ℃/W isc website：www.iscsemi.