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IRFP4468 - N-Channel MOSFET

Features

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  • Static drain-source on-resistance: RDS(on)≤2.6mΩ.
  • Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4468，IIRFP4468 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.6mΩ ·Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·High Speed Power Switching ·Hard Switched And High Frequency Circuits ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 195 IDM Drain Current-Single Pulsed 1120 PD Total Dissipation @TC=25℃ 520 Tj Max.
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