Inchange Semiconductor IRFP4468
N-Channel MOSFET
| Part No. | IRFP4468 |
|---|---|
| Datasheet | IRFP4468 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Static drain-source on-resistance: RDS(on)≤2.6mΩ●Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA)
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION
●High Efficiency Synchronous Rectification in SMPS
●Uninterruptible Power Supply
●High Speed Power Switching
●Hard Switched And High Frequency Circuits
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 195 IDM Drain Current-Single Pulsed 1120 PD Total Dissipation @TC=25℃ 520 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.29 40 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4468，IIRFP4468 ELECTRICAL CHARA...
