Inchange Semiconductor IRFP452R
N-Channel MOSFET Transistor
FEATURES
●Drain Current –ID= 12A@ TC=25℃●Drain Source Voltage- : VDSS= 500V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max)
●Fast Switching
DESCRIPTION
●Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 500 V ±20 V 12 A 48 A 150 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient MAX 0.83 80 UNIT ℃/W ℃/W isc website: 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor