Download IRFP4710 Datasheet PDF
Inchange Semiconductor
IRFP4710
FEATURES - Static drain-source on-resistance: RDS(on)≤14mΩ - Enhancement mode: Vth =3.5 to 5.5 V (VDS=VGS, ID=250μA) - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRITION - High Frequency DC-DC Converters - Uninterruptible Power Supply - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage Gate-Source Voltage ±20 Drain Current-Continuous Drain Current-Single Pulsed Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.81 40 UNIT ℃/W ℃/W isc website:.iscsemi.cn...