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IRFP4710 - N-Channel MOSFET

Key Features

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  • Static drain-source on-resistance: RDS(on)≤14mΩ.
  • Enhancement mode: Vth =3.5 to 5.5 V (VDS=VGS, ID=250μA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4710，IIRFP4710 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤14mΩ ·Enhancement mode: Vth =3.5 to 5.5 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Frequency DC-DC Converters ·Uninterruptible Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 72 IDM Drain Current-Single Pulsed 300 PD Total Dissipation @TC=25℃ 190 Tj Max.