Datasheet Summary
isc N-Channel MOSFET Transistor
IRFP4768，IIRFP4768
- Features
- Static drain-source on-resistance:
RDS(on)≤17.5mΩ
- Enhancement mode:
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- High Efficiency Synchronous Rectification in SMPS
- Uninterruptible Power Supply
- High Speed Power Switching
- Hard Switched And High Frequency Circuits
-...
