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IRFP7718 - N-Channel MOSFET

Key Features

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  • Static drain-source on-resistance: RDS(on)≤1.8mΩ.
  • Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP7718，IIRFP7718 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.8mΩ ·Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Synchronous Rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 195 IDM Drain Current-Single Pulsed 1590 PD Total Dissipation @TC=25℃ 517 Tj Max.