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IRFR024NPBF - N-Channel MOSFET

Key Features

  • Drain Current ID=17A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 55V(Min).
  • Static Drain-Source On-Resistance : RDS(on) =75mΩ(Max)@VGS=10V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRFR024NPBF ·FEATURES ·Drain Current ID=17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) =75mΩ(Max)@VGS=10V ·High density cell design for ultra low Rdson ·Fully characterized avalanche voltage and current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Power switching application ·Hard switched and high frequency circuits ·Uninterruptible power supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 55 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 17 A IDM Drain Current-Single Plused 68 A Ptot Total Dissipation@TC=25℃ 45 W Tj Max.