Datasheet4U Logo Datasheet4U.com

IRFR18N15D - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on)≤125mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – IRFR18N15D

Datasheet Details

Part number IRFR18N15D
Manufacturer INCHANGE
File Size 237.91 KB
Description N-Channel MOSFET
Datasheet download datasheet IRFR18N15D Datasheet
Additional preview pages of the IRFR18N15D datasheet.

📁 Similar Datasheet

  • IRFR18N15D - SMPS MOSFET (International Rectifier)
  • IRFR18N15DPBF - SMPS MOSFET (International Rectifier)
  • IRFR1010Z - AUTOMOTIVE MOSFET (International Rectifier)
  • IRFR1010ZPBF - AUTOMOTIVE MOSFET (International Rectifier)
  • IRFR1018EPbF - Power MOSFET (International Rectifier)
  • IRFR110 - N-Channel Power MOSFETs (Intersil Corporation)
  • IRFR110 - Power MOSFET (Vishay Siliconix)
  • IRFR110 - N-Channel Power MOSFETs (Fairchild Semiconductor)
  • IRFR110 - Power MOSFET (International Rectifier)
  • IRFR110A - Power MOSFET (Samsung)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor IRFR18N15D, IIRFR18N15D ·FEATURES ·Static drain-source on-resistance: RDS(on)≤125mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 18 IDM Drain Current-Single Pulsed 72 PD Total Dissipation @TC=25℃ 110 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.
Published: |