IRFR220N Overview
isc N-Channel MOSFET Transistor IRFR220N, IIRFR220N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤600mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency DC-DC converters ·
IRFR220N Key Features
- Static drain-source on-resistance
- DESCRITION -High frequency DC-DC converters

