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IRFR5305 - P-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on)≤65mΩ(@VGS= -10V; ID= -16A).
  • Advanced trench process technology.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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isc P-Channel MOSFET Transistor IRFR5305 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤65mΩ(@VGS= -10V; ID= -16A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -31 PD Total Dissipation @TC=25℃ 110 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 1.36 UNIT ℃/W isc website：www.iscsemi.
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