IRFR812 - N-Channel MOSFET

Datasheet Summary

Features

Static drain-source on-resistance: RDS(on)≤1.85Ω.
Enhancement mode:.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IRFR812
Manufacturer	INCHANGE
File Size	237.91 KB
Description	N-Channel MOSFET
Datasheet	IRFR812 Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IRFR812, IIRFR812 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.85Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Uninterruptible power supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 3.6 IDM Drain Current-Single Pulsed 14.4 PD Total Dissipation @TC=25℃ 78 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.

Published: Oct 13, 2020 |