Inchange Semiconductor IRFS3306
N-Channel MOSFET
| Part No. | IRFS3306 |
|---|---|
| Datasheet | IRFS3306 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●With TO-263( D2PAK ) packaging●High speed switching
●Low gate input resistance
●Standard level gate drive
●Easy to use
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●
APPLICATIONS
●Power supply●Switching applications
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 160 110 620 PD Total Dissipation 230 Tj Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.65 40 UNIT ℃/W ℃/W IRFS3306 isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRFS3306
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.15mA 60 V 2.0 4.0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=75A 3.