Datasheet4U Logo Datasheet4U.com

IRFS4127 - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on)≤22mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFS4127PbF Power MOSFET International Rectifier
IRFS4115 Power MOSFET International Rectifier
IRFS4115-7PPbF Power MOSFET International Rectifier
IRFS4115PbF Power MOSFET International Rectifier
IRFS41N15D Power MOSFET IRF

Other Datasheets by Inchange Semiconductor

Part Number Description
IRFS4115PbF N-Channel MOSFET
IRFS41N15D TO-263 N-Channel MOSFET
IRFS41N15D TO-262 N-Channel MOSFET
IRFS4010 N-Channel MOSFET
IRFS4020PBF N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor IRFS4127, IIRFS4127 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤22mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 72 IDM Drain Current-Single Pulsed 300 PD Total Dissipation @TC=25℃ 375 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.4 40 UNIT ℃/W ℃/W isc website：www.