Inchange Semiconductor IRFS4615
TO-262 N-Channel MOSFET
| Part No. | IRFS4615 |
|---|---|
| Datasheet | IRFS4615 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | TO-262 N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●With To-262 package●Low input capacitance and gate charge
●Low gate input resistance
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●
APPLICATIONS
●Switching applications●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGSS Gate-Source Voltage ±20 V ID Drain Current-ContinuousTc=25℃ Tc=100℃ 33 24 A IDM Drain Current-Single Pulsed 140 A PD Total Dissipation @TC=25℃ 144 W Tch Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.05 UNIT ℃/W IRFS4615 isc website： 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor IRFS4615
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.1mA RDS(on) Drai...