Inchange Semiconductor IRFS630A
N-Channel MOSFET Transistor
| Part No. | IRFS630A |
|---|---|
| Datasheet | IRFS630A Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Avalanche Rugged Technology●Rugged Gate Oxide Technology
●Lower Input Capacitance
●Improved Gate Charge
●Extended Safe Operating Area
DESCRIPTION
●Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 200 V ±30 V 6.5 A 36 A 38 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 3.33 62.5 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS630AELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Break...