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IRFS644A Datasheet PDF

Inchange Semiconductor IRFS644A

N-Channel MOSFET Transistor

Part No. IRFS644A
Datasheet IRFS644A Download
Manufacturer
Inchange Semiconductor
Description N-Channel MOSFET Transistor
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IRFS644A datasheet page 1 preview

FEATURES

●Avalanche Rugged Technology
●Rugged Gate Oxide Technology
●Lower Input Capacitance
●Improved Gate Charge
●Extended Safe Operating Area
●Lower Leakage Current : 10 A (Max.) @ VDS = 250V

DESCRIPTION

●Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 250 ±30 V V 7.9 A 56 A 43 W -55~150 -55~150 ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 2.89 62.5 UNIT ℃/W ℃/W isc website: 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS644A

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBO...
IRFS644A page 2 preview