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IRFS7534TRLPBF - N-Channel MOSFET

General Description

Drain Current ID=232 A@ TC=25℃ Drain Source Voltage- : VDSS= 60V(Min) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characteriz

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isc N-Channel MOSFET Transistor IRFS7534TRLPBF DESCRIPTION ·Drain Current –ID=232 A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Improved Gate, Avalanche and Dynamic dV/dt Ruggedness · Fully Characterized Capacitance and Avalanche SOA · Enhanced body diode dV/dt and dI/dt Capability · Lead-Free, RoHS Compliant ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 232 A Ptot Total Dissipation@TC=25℃ 294 W Tj Max.