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IRFS840A Datasheet PDF

Inchange Semiconductor IRFS840A

N-Channel MOSFET Transistor

Part No. IRFS840A
Datasheet IRFS840A Download
Manufacturer
Inchange Semiconductor
Description N-Channel MOSFET Transistor
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IRFS840A datasheet page 1 preview

FEATURES

●Avalanche Rugged Technology
●Rugged Gate Oxide Technology
●Lower Input Capacitance
●Improved Gate Charge
●Extended Safe Operating Area

DESCRIPTION

●Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 500 V ±20 V 4.6 A 32 A 44 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 2.86 62.5 UNIT ℃/W ℃/W isc website: 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS840A

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Break...
IRFS840A page 2 preview