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isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤32mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·High frequency DC-DC converters
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
150
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
51
A
IDM
Drain Current-Single Pulsed
240
A
PD
Total Dissipation @TC=25℃
230
W
Tj
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
MAX 0.47
UNIT ℃/W
IRFSL52N15D
isc website：www.iscsemi.
IRFSL52N15D Datasheet
