Datasheet4U Logo Datasheet4U.com

IRFU120 - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on)≤0.27Ω.
  • Enhancement mode.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFU120 POWER MOSFET International Rectifier
IRFU120 N-Channel Power MOSFETs Intersil Corporation
IRFU120 Power MOSFET Vishay Siliconix
IRFU1205 Power MOSFET International Rectifier
IRFU1205PBF Power MOSFET International Rectifier

Other Datasheets by Inchange Semiconductor

Part Number Description
IRFU1205 N-Channel MOSFET
IRFU120N N-Channel MOSFET
IRFU120Z N-Channel MOSFET
IRFU1010Z N-Channel MOSFET
IRFU1018E N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor IRFU120 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.27Ω ·Enhancement mode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Power factor correction ·Switched mode power supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 7.7 IDM Drain Current-Single Pulsed 31 PD Total Dissipation @TC=25℃ 42 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 2.98 UNIT ℃/W isc website：www.iscsemi.