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Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-251(IPAK) packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
IRFU220N
·APPLICATIONS ·Switching applications ·DC-DC converters ·High frequency
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±20
5.0 3.