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IRFU2607Z Datasheet PDF

Inchange Semiconductor IRFU2607Z

N-Channel MOSFET

IRFU2607Z Specifications

  • Drain-Source Resistance : 22mΩ
  • Min Breakdown Voltage : 75V
  • Terminals : 3
  • Max Power Dissipation : 110W
  • Max Operating Temp : 175°C
Source: Octopart
Part No. IRFU2607Z
Datasheet IRFU2607Z Download
Manufacturer
Inchange Semiconductor
Description N-Channel MOSFET
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IRFU2607Z datasheet page 1 preview

FEATURES

●With TO-251(IPAK) packaging
●High speed switching
●Easy to use
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●

APPLICATIONS

●Power supply
●DC-DC converters
●Motor control
●Switching applications
●

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 45 IDM Drain Current-Single Pulsed 180 PD Total Dissipation 110 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃
●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.38 40 UNIT ℃/W ℃/W IRFU2607Z isc website: 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRFU2607Z

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA VGS(th) Gate Threshold V...
IRFU2607Z page 2 preview