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IRFU3707Z Datasheet PDF

Inchange Semiconductor IRFU3707Z

N-Channel MOSFET

Part No. IRFU3707Z
Datasheet IRFU3707Z Download
Manufacturer
Inchange Semiconductor
Description N-Channel MOSFET
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IRFU3707Z datasheet page 1 preview

FEATURES

●With TO-251(IPAK) packaging
●High speed switching
●Easy to use
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●

APPLICATIONS

●Power supply
●DC-DC converters
●Motor control
●Switching applications
●

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 56 IDM Drain Current-Single Pulsed 240 PD Total Dissipation 50 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃
●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 3.0 50 UNIT ℃/W ℃/W IRFU3707Z isc website: 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRFU3707Z

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 30 V VGS(...
IRFU3707Z page 2 preview