IRFU5305
IRFU5305 is P-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES
- Static drain-source on-resistance:
RDS(on)≤65mΩ(@VGS= -10V; ID= -16A)
- Advanced trench process technology
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- Fast switching application.
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-55
Gate-Source Voltage
±20
Drain Current-Continuous
-31
Total Dissipation @TC=25℃
Tj
Max.
Operating
Temperature
Junction -55~175
℃
Tstg
Storage Temperature
-55~175
℃
- THERMAL CHARACTERISTICS
SYMBOL...
