Datasheet4U Logo Datasheet4U.com

IRFU9024N - P-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on)≤175mΩ(@VGS= -10V; ID= -6.6A).
  • Advanced trench process technology.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFU9024N Power MOSFET IRF
IRFU9024NCPBF Power MOSFET International Rectifier
IRFU9024NPBF Power MOSFET International Rectifier
IRFU9024 P-Channel Power MOSFETS Samsung Electronics
IRFU9024 Power MOSFET IRF

Other Datasheets by Inchange Semiconductor

Part Number Description
IRFU9N20D N-Channel MOSFET
IRFU014 N-Channel MOSFET
IRFU024N N-Channel MOSFET
IRFU1010Z N-Channel MOSFET
IRFU1018E N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤175mΩ(@VGS= -10V; ID= -6.6A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -55 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -11 A PD Total Dissipation @TC=25℃ 28 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 3.3 ℃/W IRFU9024N isc website：www.iscsemi.