Inchange Semiconductor IRFW450
N-Channel MOSFET Transistor
| Part No. | IRFW450 |
|---|---|
| Datasheet | IRFW450 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Drain Current –ID= 14A@ TC=25℃●Drain Source Voltage- : VDSS= 500V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 0.4Ω (Max)
●Fast Switching
DESCRIPTION
●Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 500 V ±20 V 14 A 56 A 180 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 0.69 30 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFW450ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VG...